METHOD FOR LOW-TEMPERATURE FAST FORMING OF SI THIN FILM AND APPARATUS FOR MANUFACTURING THE SAME

摘要

PURPOSE: A method and an apparatus for low-temperature and high-speed depositing a silicon thin film are provided to obtain the light temperature gradient between a substrate and a chamber by cooling the substrate in a silicon thin film depositing process. CONSTITUTION: A silicon source gas is introduced in a chamber(10). A chamber heating part(12) heats the chamber by being installed in the chamber. A substrate supporting part is mounted in the chamber. The substrate supporting part supports a substrate on which a silicon thin film is deposited. The silicon thin film is deposited on the substrate by heating and thermally decomposing the silicon source gas.