发明名称 ETHANE IMPLANTATION WITH A DILLUTION GAS
摘要 <p>To implant a carbon-containing species, a gas containing carbon is ionized in the ion chamber. The ionization of this gas will typically produce a number of ionized species. However, many of these resulting ionized species are not beneficial to the desired implant, as they contain only non-carbon atoms. These species must be eliminated before the implantation, leaving only carbon-based species. However, the current of the desired species may be low, thereby requiring extra energy or time to implant the desired dosage of carbon into a substrate. This can be improved through the use of a second gas. This second gas is used to dilute the primary carbon-containing gas to be ionized in the ion chamber. By incorporating this dilution gas, more of the resulting ionized species are beneficial to the carbon implantation.</p>
申请公布号 KR20100135733(A) 申请公布日期 2010.12.27
申请号 KR20107019482 申请日期 2009.02.11
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 CHANEY CRAIG R.;DORI ADOLPH R.;HATEM CHRISTOPHER R.;PEREL ALEXANDER S.
分类号 H01L21/265 主分类号 H01L21/265
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