| 摘要 |
<p>PURPOSE: A method uses the image of the result pattern after etching and the optical proximity effect correction adds the variable of the simulation model. In that way of basing on the result pattern is after etching, it exacts, the optical proximity effect correction layout is an inspection of evidence effected. CONSTITUTION: The data of the original copy layout designing the layout of the target pattern pattern-scaning through exposure and phenomenon, the etching process on the wafer is obtained and it drives away to the database(110). The optical proximity effect correction modeling and OPC process are proceed. The original copy layout is amended(120).</p> |
