| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating a silicon substrate that evaluates a dot defect of a device active region precisely through nondestructive inspection by evaluating the silicon substrate while enhancing sensitivity of a CL method, and a method of manufacturing a semiconductor device using the method of evaluating the silicon substrate. SOLUTION: The method of evaluating the silicon substrate includes forming a PN junction on a silicon substrate surface, irradiating a depletion region of the silicon substrate having the PN junction formed with an electron beam, and evaluating the silicon substrate from the wavelength and intensity of light emitted by the silicone substrate irradiated with the electron beam. COPYRIGHT: (C)2011,JPO&INPIT |
