| 摘要 |
<p>A three-dimensional semiconductor device structure includes a first semiconductor device and a second semiconductor device bonded together using a patterned conductive layer according to an embodiment of the invention. The first semiconductor device includes a first plurality of terminals on its front side, and the second semiconductor device includes a second plurality of terminals on its front side. The patterned conductive layer includes a plurality of conductive regions. Each of the conductive regions is bonded to a conductor coupled to one of the first plurality of terminals and bonded to another conductor coupled to one of the second plurality of terminals, providing electrical coupling between the first semiconductor device and the second semiconductor device. In a specific embodiment, each terminal of the first semiconductor device is bonded to a corresponding terminal of the second semiconductor device, providing a parallel combination of the first and the second semiconductor devices.</p> |
