发明名称 ETCHING SOLUTION COMPOSITION
摘要 Provided is an etching solution composition for selectively etching a metal film, which is composed of Al, Al alloy or the like and is arranged on an amorphous oxide film, from a laminated film including the metal film and an amorphous oxide film of various types. The etching solution composition is used for selectively etching the metal film from the laminated film which includes the amorphous oxide film and the metal film composed of Al, Al alloy, Cu, Cu alloy, Ag or Ag alloy, and is composed of an aqueous solution containing an alkali.
申请公布号 US2010320457(A1) 申请公布日期 2010.12.23
申请号 US20080744380 申请日期 2008.11.21
申请人 MATSUBARA MASAHITO;INOUE KAZUYOSHI;YANO KOKI;IGARASHI YUKI 发明人 MATSUBARA MASAHITO;INOUE KAZUYOSHI;YANO KOKI;IGARASHI YUKI
分类号 H01L29/22;C09K13/00;H01L21/336;H01L21/465 主分类号 H01L29/22
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