| 发明名称 |
TRANSISTOR COMPONENT HAVING AN AMORPHOUS SEMI-ISOLATING CHANNEL CONTROL LAYER |
| 摘要 |
Disclosed is a transistor component having a control structure with a channel control layer of an amorphous semiconductor insulating material extending in a current flow direction along a channel zone.
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| 申请公布号 |
US2010320536(A1) |
申请公布日期 |
2010.12.23 |
| 申请号 |
US20090486471 |
申请日期 |
2009.06.17 |
| 申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SCHMIDT GERHARD |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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