| 摘要 |
The invention relates to image sensors produced with CMOS technology, whose individual pixels, arranged in an array of rows and columns, each consist of a photodiode associated with a charge storage region which receives the photogenerated charge before a charge readout phase. To eliminate the risk of introducing kTC-type noise into the signal, during the reset of the storage zone at the end of a readout cycle, the invention proposes that the storage zone be divided into two parts one of which, adjacent to the reset gage, is covered by a diffused region of the same type of conductivity as the substrate in which the photodiode is formed, this region being brought to the fixed potential of the substrate, and the other of which is not covered by such a region and is not adjacent to the reset gate.
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