GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE

摘要

A light-emitting diode element comprises an n-type GaN substrate (7), the principal surface (7a) of which is an m-plane, and a laminated structure provided on the principal surface (7a) of the substrate (7). The laminated structure is provided with an n-type semiconductor layer (2), an active layer (3) located on a first region (2a) of the upper surface of the n-type semiconductor layer (2), a p-type semiconductor layer (4), an anode electrode layer (5), and a cathode electrode layer (6) formed on a second region (2b) of the upper surface of the n-type semiconductor layer (2). All of the n-type semiconductor layer (2), the active layer (3), and the p-type semiconductor layer (4) are epitaxially grown layers which are formed by growth on the m-plane. The concentrations of n-type impurities in the substrate (7) and the n-type semiconductor layer (2) are set to 1×1018 cm-3 or less. When viewed from the direction perpendicular to the principal surface (7a), the distance between the anode electrode layer (5) and the cathode electrode layer (6) is 4 µm or less, and the anode electrode layer (5) is disposed in a region, the distance of which from a portion facing the anode electrode layer (5) of the edge of the cathode electrode layer (6) is 45 µm or less.