| 摘要 |
<p>PURPOSE: The manufacturing method of the phase shifting mask evaporates the protective film before the CD correction on the open surface of the light projecting board. CONSTITUTION: The phase shift layer pattern and light block film pattern are formed on the light projecting board(310). CD of the phase shift layer pattern is measured at(320). The protective film is evaporated on the open surface of the light projecting board in case the CD measured at as described above bigs than the design CD(330, 340). The etching for the CD correction of the phase shift layer pattern operates(350). The light block film pattern and protective film are removed(360).</p> |
