| 摘要 |
A DRAM cell includes a substrate (100,200), a transistor (120,220), and a magnetic capacitor (140,240). The substrate is composed of semiconductor material with a main surface, the transistor is formed at the main surface, and the magnetic capacitor is formed in a metal layer. The magnetic capacitor includes a first magnetic layer (142), a dielectric layer (144) formed on the surface of the first magnetic layer, and a second magnetic layer (146) formed on the surface of the dielectric layer. The dielectric layer is a non-conductive material and the first magnetic layer and the second magnetic layer are formed by an alloy of CoNiFe.
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