发明名称 |
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR FORMING RESIST PATTERN USING THE SAME |
摘要 |
<p>It is an object to provide a resist underlayer film forming composition having a large selection ratio of a dry etching rate, and having a k value and an n value at a short wavelength such as an ArF excimer laser, both of which exhibit desired values. There is provided a resist underlayer film forming composition containing a polymer obtained by reacting at least a tetracarboxylic dianhydride having an alicyclic structure or an aliphatic structure and a diepoxy compound having two epoxy groups with an organic solvent containing an alcohol-based compound having an OH group, and a solvent.</p> |
申请公布号 |
KR20100133965(A) |
申请公布日期 |
2010.12.22 |
申请号 |
KR20107019539 |
申请日期 |
2009.02.19 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
SAKAMOTO RIKIMARU;ENDO TAKAFUMI |
分类号 |
G03F7/11;C08G59/42;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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