| 发明名称 |
METHOD FOR PERFORMING GROWTH OF COMPOUND THIN FILMS |
| 摘要 |
Carrier gas is applied to atomic layer epitaxy. After a reacting gas prepares a thin film, carrier gas is introduced and another reacting gas is drawn to prepare another thin film. The alternation of carrier gas prevents unnecessary reactions between different kinds of reacting gases.
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| 申请公布号 |
KR860001049(B1) |
申请公布日期 |
1986.08.01 |
| 申请号 |
KR19800001508 |
申请日期 |
1980.04.11 |
| 申请人 |
OY LOHIA AB |
发明人 |
SUNTOLA TUOMO S.;PAKKALA ARTO J;LINDFORS SVEN G. |
| 分类号 |
C30B23/02;(IPC1-7):C30B23/02 |
主分类号 |
C30B23/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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