发明名称 |
GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER |
摘要 |
<p>A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle "A" between the (0001) plane (the reference plane S R3 shown in Fig. 5 ) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle "B" between the (0001) plane of the GaN supporting base (the reference plane S R4 shown in Fig. 5 ) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles "A" and "B" are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.</p> |
申请公布号 |
EP2264743(A1) |
申请公布日期 |
2010.12.22 |
申请号 |
EP20090729983 |
申请日期 |
2009.04.03 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YOSHIZUMI, YUSUKE;ENYA, YOHEI;UENO, MASAKI;NAKANISHI, FUMITAKE |
分类号 |
H01L21/205;C30B29/38;H01L33/00;H01L33/06;H01L33/12;H01L33/16;H01L33/32;H01S5/343 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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