| 发明名称 |
METHOD FOR FORMATION OF SILICEOUS FILM |
| 摘要 |
The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered. |
| 申请公布号 |
EP2264754(A1) |
申请公布日期 |
2010.12.22 |
| 申请号 |
EP20090715661 |
申请日期 |
2009.02.27 |
| 申请人 |
AZ ELECTRONIC MATERIALS (JAPAN) K.K.;AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
NAGAHARA, TATSURO;HAYASHI, MASANOBU |
| 分类号 |
H01L21/76;B05D7/24;C09D5/25;C09D183/16;H01L21/312;H01L21/316;H01L21/762;H01L21/768;H01L23/522 |
主分类号 |
H01L21/76 |
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