发明名称 Method of integrating an air gap structure with a substrate
摘要 A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer.
申请公布号 US7855123(B2) 申请公布日期 2010.12.21
申请号 US20090415022 申请日期 2009.03.31
申请人 TOKYO ELECTRON LIMITED 发明人 LEE ERIC M.;LIU JUNJUN;TOMA DOREL I.
分类号 H01L21/76 主分类号 H01L21/76
代理机构 代理人
主权项
地址