发明名称 |
Excitation band-gap tuning of dopant based quantum dots with core-inner shell-outer shell |
摘要 |
A composition and method for fabricating and tuning a dopant based core-shell semiconductor having a quantum dot core with an excitation band-gap are provided. A quantum dot core composed of an alloy of cadmium sulfide (CdS) and zinc sulfide (ZnS) as semi-conductor materials include a dopant of manganese (Mn) added to the core and an outer shell of zinc sulfide (ZnS). The dopant based core/shell quantum dot semiconductor of the present invention allows the fine tuning of an excitation band-gap, covering a wide range (from 2.4 eV to˜4 eV). When doped with Mn, these alloy Qdots emit bright yellow/orange light. Tuning of the excitation band is accomplished by changing the alloy composition of the core. Based on photophysical studies a new core/shell/shell model is provided, in place of the traditional core/shell model. Due to the interfacial diffusion of the cations from the core and shell an intermediate alloy layer is formed providing an inner shell; this inner shell layer is the real host of the dopant ions.
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申请公布号 |
US7855091(B1) |
申请公布日期 |
2010.12.21 |
申请号 |
US20100793400 |
申请日期 |
2010.06.03 |
申请人 |
UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. |
发明人 |
KAR SOUMITRA;SANTRA SWADESHMUKUL |
分类号 |
H01L29/15;G02F1/017 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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