发明名称 |
Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process |
摘要 |
A semiconductor device includes a transistor, a capacitor and a resistor wherein the capacitor includes a doped polysilicon layer to function as a bottom conductive layer with a salicide block (SAB) layer as a dielectric layer covered by a Ti/TiN layer as a top conductive layer thus constituting a single polysilicon layer metal-insulator-polysilicon (MIP) structure. While the high sheet rho resistor is also formed on the same single polysilicon layer with differential doping of the polysilicon layer.
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申请公布号 |
US7855422(B2) |
申请公布日期 |
2010.12.21 |
申请号 |
US20060444852 |
申请日期 |
2006.05.31 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD. |
发明人 |
HU YONGZHONG;TAI SUNG-SHAN |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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