Method of forming a isolation layer in semiconductor memory device,申请号KR20070140285-传众专利搜索

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发明名称	Method of forming a isolation layer in semiconductor memory device
摘要
申请公布号	KR101002493(B1)	申请公布日期	2010.12.17
申请号	KR20070140285	申请日期	2007.12.28
申请人		发明人
分类号	H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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