SILICON WAFER AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To secure sufficient gettering capability even when a device is made thinner and to prevent injection atoms from affecting a device active layer and deteriorating device characteristics. SOLUTION: A method of manufacturing a silicon wafer includes: an injection step; and an injection peak layer removal step of removing an injection peak layer from the surface of the wafer up to a peak layer including a peak position where the concentration of injection elements injected is at its peak in the direction of wafer thickness and containing 50-98% of the injection element. A gettering layer is formed which has the peak of the gettering capability corresponding to a depth position deeper than the peak position of the concentration of the injection element. COPYRIGHT: (C)2011,JPO&INPIT