发明名称 METHOD FOR MANUFACTURING REGENERATED SEMICONDUCTOR WAFER
摘要 <p><P>PROBLEM TO BE SOLVED: To solve a problem that the manufacturing of a regeneration test wafer or the like from a used product wafer inevitably requires the introduction of a mechanical removing means such as grinding with a high removing rate since many of used product wafers include deep diffusion layers or the like and the removal of the diffusion layer is needed, and furthermore, requires the removal of a deformation layer resulting from the machining. <P>SOLUTION: The method for manufacturing a silicon-based regeneration test wafer or the like includes a step of performing chemical mechanical polishing to one main surface of the wafer having irregularities by the use of a polishing slurry containing floating abrasive particles and a water-soluble polymer after removing a structural layer on a surface of a used test wafer (non-product wafer) to a necessary extent by wet etching. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010283184(A) 申请公布日期 2010.12.16
申请号 JP20090135775 申请日期 2009.06.05
申请人 FA SERVICE CORP;HITACHI CHEM CO LTD 发明人 YUNOGAMI TAKASHI;NOMURA YUTAKA;NOBE SHIGERU
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
代理机构 代理人
主权项
地址