| 摘要 |
PROBLEM TO BE SOLVED: To improve operation reliability and reduce magnetic noise by reducing data write current in an MRAM device including MTJ memory cells. SOLUTION: In data writing, data write currents±Iw to be supplied to a bit line pair BLP are supplied as reciprocating currents flowing in different directions in bit lines BL and /BL, respectively in a selected memory cell column. In the bit line pair BLP, the bit lines BL and /BL are formed using different metallic wiring layers so as to hold a magnetic tunnel junction part MTJ in a vertical direction. The bit lines BL and /BL are electrically coupled to each other at an end of a memory array 10 by an equalizer transistor 62, to supply data write currents. COPYRIGHT: (C)2011,JPO&INPIT
|
