| 摘要 |
PROBLEM TO BE SOLVED: To extend the selection range of resistance value of a resistant element, and also to prevent silicidation of a resistant layer without formation of a silicide block after forming the resistant layer. SOLUTION: An insulating film 15 is formed on a semiconductor area 11, and ion implantation 12 of impurities is performed to the semiconductor area 11 through the insulating film 15, whereby a resistant layer 13 is formed under the insulating film 15, and an electrode area 14 is formed adjacent to the resistance layer 13. Thereafter, a silicide film 17 is formed on a surface of an electrode area 14. At this time, the insulating film 15 functions as a silicide block which prevents silicidation of the resistant layer 13. As the ion implantation 12, a step of injecting impurities to a source/drain area of an MOS transistor formed on the same semiconductor substrate can be used. COPYRIGHT: (C)2011,JPO&INPIT |
