| 摘要 |
A solid-state imaging device includes a light receiving unit formed in a semiconductor base and configured to perform photoelectric conversion; an insulating layer disposed on the semiconductor base; a film constituting a cladding of a waveguide together with the insulating layer and being formed in an outer part of an interior of a hole by coating, the hole being formed in the insulating layer above the light receiving unit; a core of the waveguide, the core being composed of a material having a higher refractive index than a material for the insulating layer and a material for the film formed by coating, the core being formed in an inner part of the interior of the hole; and an inner lens integrated with the waveguide, the inner lens having a lens surface formed at the bottom of the hole at the interface between the film formed by coating and the core.
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