| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel apparatus for manufacturing a carbon film. SOLUTION: The apparatus for manufacturing the carbon film includes: an electron beam generating device 7 wherein supply gas is irradiated with electron beams to generate plasma; a carbon source container 4 which stores a carbon source and allows the carbon source to be heated and vaporized; and a substrate 3 for depositing the carbon source thereon. In such a case, the supply gas is desirably argon gas. An electron passage amount of the electron beam generating device 7 is desirably in the range of 10 to 100 A. The carbon source is desirably a carbon particle of fullerene C<SB>60</SB>, fullerene C<SB>70</SB>or other carbon particle of nano scale. Further, an area of the substrate 3 is desirably in the range of 1 to 100 cm<SP>2</SP>. Furthermore, a bias voltage of the substrate 3 is desirably in the range of -500 to 0 V. COPYRIGHT: (C)2011,JPO&INPIT
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