| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of improving the performance of a semiconductor laser and an electric field-absorption type optical modulator by increasing theΔE<SB>C</SB>of active layers of these parts and further capable of being used for high-speed modulator integrated light sources for telecommunication and data communication in a temperature range of 25 to 85°C by sharply improving the performance of a modulator using a suitable active layer parameter. SOLUTION: The optical semiconductor device is configured to form the semiconductor laser 10, the electric field-absorption type optical modulator 30 and a passive layer 20 on a substrate 1. In the optical semiconductor device, a semiconductor mixed crystal of the substrate 1 is defined as InP, a quantum well layer and a barrier layer of an active part 2 of the semiconductor laser are defined as In<SB>1-x-y</SB>Al<SB>x</SB>Ga<SB>y</SB>As, a diffraction grating forming layer is defined as In<SB>1-x</SB>Ga<SB>x</SB>As<SB>y</SB>P<SB>1-y</SB>, and a quantum well layer and a barrier layer of an active part 5 of the electric field absorption type optical modulator are defined as In<SB>1-x-y</SB>Al<SB>x</SB>Ga<SB>y</SB>As. Further, in the active part 5 of the electric field absorption type optical modulator, the number of quantum wells is 2 to 20, the strain of the quantum well layer is -0.6 to 1%, and a band gap wavelength of the barrier layer is 0.9 to 1.05μm. COPYRIGHT: (C)2011,JPO&INPIT |
