发明名称 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
摘要 A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.
申请公布号 US2010316814(A1) 申请公布日期 2010.12.16
申请号 US20100792214 申请日期 2010.06.02
申请人 FUJITSU LIMITED 发明人 NAKAMURA NORIKAZU;MIYAHARA SHOICHI;CHIBA HIROSHI
分类号 C23C16/00;H05H1/24 主分类号 C23C16/00
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