发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To save time and effort for re-designing an interface for preventing a through-current when diverting a circuit block which controls a power supply voltage. <P>SOLUTION: A first chip (CHP1) includes: first and second nodes; a first circuit block to which a power supply voltage is supplied; a first MOS transistor having a source-drain path between third and second nodes; a first control circuit for controlling ON/OFF of the first MOS transistor; and a first conversion circuit to which output of the first circuit block is input together with the power supply voltage. A second chip (CHP2) includes: fourth and fifth nodes; and a second conversion circuit to which output of the first conversion circuit is input together with the power supply voltage. When the first MOS transistor is ON, the first control circuit outputs a first control signal of a first state to the first conversion circuit and the first conversion circuit outputs a signal of the first circuit block to the second conversion circuit. When the first MOS transistor is OFF, the first control signal of a second state is output to the first conversion circuit, and the first conversion circuit controls the output to a potential of the first or the second node. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010283885(A) 申请公布日期 2010.12.16
申请号 JP20100198591 申请日期 2010.09.06
申请人 RENESAS ELECTRONICS CORP 发明人 MIZUNO HIROYUKI;SUGANO YUSUKE;YANAGISAWA KAZUMASA;YASU YOSHIHIKO;OHIRA NOBUHIRO
分类号 H03K19/00;H01L21/822;H01L27/04 主分类号 H03K19/00
代理机构 代理人
主权项
地址