| 摘要 |
A method of manufacturing a semiconductor device includes performing heat treatment for activating impurities of a transistor having a gate electrode over a gate insulating film with a higher relative permittivity than a silicon oxynitride film or a silicon oxide film. In the heat treatment, a first heat treatment, in which a wafer surface is heated at a temperature of 800 to 1000° C. in 5 to 50 milliseconds by low-output flash lamp annealing or laser annealing, and a second heat treatment, in which the wafer surface is heated at a temperature equal to or more than of 1100° C. in 0.1 to 10 milliseconds by flash lamp annealing or laser annealing with a higher output than in the first heat treatment, are performed in this order.
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