| 摘要 |
AN MTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR 5 A CHEMICAL SENSOR HAVING AN ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) COMPRISING A SUBSTRATE (10) SITUATED WITH A SOURCE (4) AND A DRAIN (3); AN ION SENSING GATE (5) DISPOSED BETWEEN THE SOURCE AND THE DRAIN; AN ION-SENSITIVE FILM (1) FORMED ON THE SURFACE OF THE SUBSTRATE AND THE ION SENSING GATE-, AN ELECTRODE DOMAIN (6) FORMED ON 10 THE ION-SENSITIVE FILM SURROUNDING THE PERIPHERY OF THE ION SENSING GATE (5) CHARACTERIZED IN THAT THE ELECTRODE DOMAIN (6) IS MADE OF TUNGSTEN, TITANIUM OR TUNGSTEN SILICIDE. (MOST ILLUSTRATED BY
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