| 摘要 |
A semiconductor device (100) comprises a semiconductor substrate, and a multilayer wiring structure arranged on the semiconductor substrate, the multilayer wiring structure including a plurality of first electrically conductive lines (7a-f), an insulating film covering the plurality of first electrically conductive lines, and a second electrically conductive line (13a-f) arranged on the insulating film so as to intersect the plurality of first electrically conductive lines, wherein the insulating film has gaps in at least some of a plurality of regions (CR1-CR12) where the plurality of first electrically conductive lines and the second electrically conductive line intersect each other, and a width of the gap in a direction along the second electrically conductive line is not larger than a width of the first electrically conductive line. The semiconductor device is a photoelectric conversion device. |
