METHOD OF FABRICATING A ZINC OXIDE BASED NANOWIRE USING A BUFFER LAYER IN A HIGH TEMPERATURE PROCESS AND METHOD OF FABRICATING A ELECTRONIC DEVICE USING THE SAME

摘要

PURPOSE: A method for fabricating a zinc oxide-based nanowire is provided to obtain the vertical growth of a nanowire by forming a zinc oxide-based nanowire after a zinc oxide buffer layer is formed on a substrate. CONSTITUTION: A method for fabricating a zinc oxide-based nanowire forms a zinc oxide-based buffer layer(102) on a substrate(100) using a chemical vapor deposition(CVD) which is performed at a first temperature and forms a zinc oxide-based nanowire(104) on the zinc oxide-based buffer layer using a chemical vapor deposition(CVD) which is performed at a second temperature greater than the first temperature.