发明名称 METHOD FOR BUFFER ACCESS OF NAND FLASH MENORY
摘要 PURPOSE: A buffer access method of a NAND flash memory for decentralizing reading/writing operation about a page is provided to minimize the number of deletion operation of the block by separating reading operation and writing operation about the page within a block. CONSTITUTION: A page which is accessed twice on a Victim LRU(Least Recently Used) list page of a buffer is added to an RADP(Frequently Accessed & Dirty Page) LRU LRU list(S100). The inputted page is added to the FADP LRU list(S200). If the FADP LRU list is fully filled, the last page of the FADP LRU list is moved to a first page of the Victim LRU list(S300).
申请公布号 KR100998212(B1) 申请公布日期 2010.12.03
申请号 KR20100054483 申请日期 2010.06.09
申请人 LIG NEX1 CO., LTD. 发明人 KIM, JONG SUN
分类号 G06F12/06;G06F12/12 主分类号 G06F12/06
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