METHOD FOR PREPARING A TANTALUM CARBIDE-BASED THIN FILM USING AN ATOMIC LAYER DEPOSITION PROCESS

摘要

PURPOSE: A method for manufacturing a tantalum carbide-based thin film using an atomic layer deposition process is provided to suppress the gas phase reaction by alternatively injecting a source gas and a reactive gas to a reactor. CONSTITUTION: A method for manufacturing a tantalum carbide-based thin film using an atomic layer deposition process comprises next steps. A material gas and reactive gas are alternatively contacted to a substrate. The tantalum precursor material is used as the material gas. Hydrocarbon/hydrogen mixed gas plasma is used as the reactive gas. The hydrocarbon gas is used as 0.5~2.5% flow rate of the reactive gas total flow rate. The hydrocarbon gas is used as 1~2.5 weight% flow rate of the reactive gas total flow rate. An atomic layer chemical vapor deposition is performed at a pressure of 0.1~2 torr.