发明名称 |
CODE ADDRESS MEMORY (CAM) CELL READ CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING DATA OF CAM CELL |
摘要 |
A Code Address Memory (CAM) cell read control circuit of a semiconductor memory device includes a CAM cell read circuit configured to read data stored in a CAM cell and to output the read data, an internal delay circuit configured to delay an externally input reset signal and to generate a number of internal command signals, and a signal generation unit configured to generate an internal ready/busy signal in response to the internal command signals. The internal ready/busy signal is generated after the externally input reset signal has reset the CAM cell read circuit.
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申请公布号 |
US2010302827(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20090650980 |
申请日期 |
2009.12.31 |
申请人 |
KIM KYOUNG NAM;SHIN BEOM JU |
发明人 |
KIM KYOUNG NAM;SHIN BEOM JU |
分类号 |
G11C15/00;G11C7/00;G11C7/10 |
主分类号 |
G11C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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