A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During bottom up fill inside the features of the wafer, a constant current or a current with a micropulse may be used. This protocol may protect the seed from corrosion while enhancing nucleation during the initial stages of plating.
申请公布号
WO2010138465(A2)
申请公布日期
2010.12.02
申请号
WO2010US35991
申请日期
2010.05.24
申请人
NOVELLUS SYSTEMS, INC.;PONNUSWAMY, THOMAS;PENNINGTON, BRYAN;BERRY, CLIFFORD;BUCKALEW, BRYAN;MAYER, STEVEN, T.
发明人
PONNUSWAMY, THOMAS;PENNINGTON, BRYAN;BERRY, CLIFFORD;BUCKALEW, BRYAN;MAYER, STEVEN, T.