SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device having low electric resistances in a bit-line contact and of a connection part between the bit-line contact and a source-drain region, and to provide a method for manufacturing the same. SOLUTION: The semiconductor memory device 100 includes: a semiconductor substrate 1 having an active region 2 compartmentalized by an element isolation region 3; a plurality of stacked gate type memory cell transistors formed on the active region 2 and connected in series; selection transistors formed on the active region 2 and connected to both the ends of the plurality of memory cell transistors; and bit-line contact 8 connected to a source-drain region 5 belonging to the selection transistor in the active region 2 and having a vertical sectional shape in a channel width direction of its lower part as a skirt shape. COPYRIGHT: (C)2011,JPO&INPIT