SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of silicon carbide or the like which eliminates the possibility of defects at a contact interface between different metals even when materials of its electrodes and materials of its inner wiring are different, and which can exhibit the high reliability after it is used for a long period of time.

SOLUTION: The semiconductor device is provided with contact electrodes 16 in contact with the silicon carbide 14 and 18 and the wiring 19 electrically connected with the contact electrodes 16. The contact electrodes 16 are formed of alloy including titanium, aluminum and silicon. The wiring 19 is formed of aluminum or aluminum alloy. The wiring 19 is brought into conduction with the contact electrodes 16 by making contacts with them.

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