| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a leakage position between a gate electrode and a semiconductor substrate is measured quickly in a non-contact manner by using a TEG element. SOLUTION: The TEG element 101 has: the gate electrode 4 one end of which is connected to a semiconductor substrate 1 wherein the one end is formed on a TEG element forming area 8 partitioned by an insulating separation groove 2 via a gate insulating film 3; impurity areas 5a formed at least at both sides of the gate electrode; and an insulating separation layer 7 which is formed at a deeper position than the impurity area so as to cover the whole bottom surface of the element forming area and electrically insulates the impurity area from the semiconductor substrate. The leakage position is determined by using: a difference between internal resistances R1, R2 when one end and the other end of the impurity areas 5a are radiated with a charged particle beam; and a resistance Rob between both ends of the impurity areas 5a. COPYRIGHT: (C)2011,JPO&INPIT
|
