Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700°C; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500°C.
申请公布号
CA2762897(A1)
申请公布日期
2010.12.02
申请号
CA20102762897
申请日期
2010.05.28
申请人
HITACHI METALS, LTD.;TEKNA PLASMA SYSTEMS INC.
发明人
HAN, GANG;UESAKA, SHUJIROH;SHOJI, TATSUYA;FUKUMARU, MARIKO;BOULOS, MAHER I.;GUO, JIAYIN;JUREWICZ, JERZY