| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein contact with the source region and the drain region of a thin film transistor surely is ensured. SOLUTION: The semiconductor device has a first interlayer insulating film formed on an insulating film and a gate electrode on a semiconductor layer, a second interlayer insulating film formed on the first interlayer insulating film, and contact holes formed in the second interlayer insulating film, the first interlayer insulating film and the insulating film. The film thickness of the first insulating layer is formed to be 1/3 or less of the total film thickness of the laminated insulating films. COPYRIGHT: (C)2011,JPO&INPIT
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