| 摘要 |
PURPOSE: A semiconductor memory device is provided to stably perform a discharge driving operation using the minimum amount of currents by regulating the pulse width of a discharging control pulse to be corresponded to the level of a driving power voltage. CONSTITUTION: A bit-line detection amplifying part(200) amplifies data in bit-lines(BL, BLB). A pulse generating part(220) generates a plurality of discharging control pulses(DISCH_CON1, DISCH_CON2). The pulse generating part includes a first expanding pulse generating part(222) and a second expanding pulse generating part(224). A discharge driving part(240) discharge-drives a core-voltage terminal(VCORE). |
