发明名称 |
Periphery barrier structure for integrated circuits |
摘要 |
<p>Chip Outline Band (COB) structure for an integrated circuit integrated in a semiconductor chip having a semiconductor substrate (1) of a first conductivity type and biased at a common reference potential (GND) of the integrated circuit, the COB structure comprising a substantially annular region (3;30) formed in the substrate (1) along a periphery thereof, and at least one annular conductor region (40,60) superimposed on and contacting the substantially annular region (3;30), characterized in that said substantially annular region (3;30) is electrically connected at said common reference potential (GND). <IMAGE> <IMAGE></p> |
申请公布号 |
EP1020907(B1) |
申请公布日期 |
2010.12.01 |
申请号 |
EP19990830007 |
申请日期 |
1999.01.15 |
申请人 |
STMICROELECTRONICS SRL |
发明人 |
PIO, FEDERICO;ZULIANI, PAOLA;FRATIN, LORENZO |
分类号 |
H01L23/00;H01L27/04;H01L21/822;H01L23/58 |
主分类号 |
H01L23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|