发明名称 Periphery barrier structure for integrated circuits
摘要 <p>Chip Outline Band (COB) structure for an integrated circuit integrated in a semiconductor chip having a semiconductor substrate (1) of a first conductivity type and biased at a common reference potential (GND) of the integrated circuit, the COB structure comprising a substantially annular region (3;30) formed in the substrate (1) along a periphery thereof, and at least one annular conductor region (40,60) superimposed on and contacting the substantially annular region (3;30), characterized in that said substantially annular region (3;30) is electrically connected at said common reference potential (GND). <IMAGE> <IMAGE></p>
申请公布号 EP1020907(B1) 申请公布日期 2010.12.01
申请号 EP19990830007 申请日期 1999.01.15
申请人 STMICROELECTRONICS SRL 发明人 PIO, FEDERICO;ZULIANI, PAOLA;FRATIN, LORENZO
分类号 H01L23/00;H01L27/04;H01L21/822;H01L23/58 主分类号 H01L23/00
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