| 摘要 |
PURPOSE: A semiconductor memory apparatus and a manufacturing method thereof are provided to implement the SRAM(Static Random Access Memory) cell which reduces the occupying area remarkably by forming a source, a gate, and a drain in vertical direction on the silicon layer. CONSTITUTION: A first well(1a) is formed within the SRAM cell array. A first storage node(Qa) comprises a first N+ bottom diffusion layer(3a), a second N+ bottom diffusion layer(5a), and a third P+ bottom diffusion layer(4a). A second storage node(Qb) comprises a fourth N+ bottom diffusion layer(3b), a fifth N+ bottom diffusion layer(5b), and a sixth P+ bottom diffusion layer(4b).
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