| 发明名称 |
Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices |
| 摘要 |
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
|
| 申请公布号 |
US7842527(B2) |
申请公布日期 |
2010.11.30 |
| 申请号 |
US20070001286 |
申请日期 |
2007.12.11 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
SCHMIDT MATHEW C.;KIM KWANG-CHOONG;SATO HITOSHI;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
| 分类号 |
H01L21/00;H01L33/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
