| 摘要 |
<p>PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to form a bit line contact with a fine pattern by using a sidewall pattern transfer process. CONSTITUTION: A semiconductor substrate(1) has an active region divided by a device isolation region. A plurality of laminated gate type memory cell transistors(4) are serially connected on the active region. Selection transistors(6a,6b) are connected to both ends of the plurality of memory cell transistors on the active region. A bit line contact(8) is connected to the drain region which belongs to the selection transistor on the active region.</p> |
