发明名称 Semiconductor integrated circuit, semiconductor device, and manufacturing method of the semiconductor integrated circuit
摘要 A chip with increased impact resistance, attractive design and reduced cost, and a manufacturing method thereof are provided. A semiconductor integrated circuit is formed on a large glass substrate, and a part of data of a ROM included therein is determined by an ink jet method or a laser cutting method. Accordingly, the cost can be reduced without requiring a photomask, resulting in an inexpensive ID chip. Further, depending on the application, the semiconductor integrated circuit is transposed to a flexible substrate, thereby an ID chip with improved impact resistance and more attractive design can be achieved.
申请公布号 US7842561(B2) 申请公布日期 2010.11.30
申请号 US20080222081 申请日期 2008.08.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO KIYOSHI
分类号 H01L21/82;H01L21/84;H01L21/768;H01L21/77;H01L21/8246;H01L27/02;H01L27/105;H01L27/112;H01L27/12;H01L27/13;H01L29/786;H01L31/036 主分类号 H01L21/82
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