发明名称 |
System and method for performing post-plating morphological Cu grain boundary analysis |
摘要 |
Grain size variations within a copper film are quantified by analyzing an SEM image of a portion of the copper film, determining an approximate total length of grain boundaries within the SEM image, and calculating a grain boundary density based on the approximate total length of the grain boundaries and the area of the copper film represented in the SEM image. The calculated grain boundary density allows for correlating plating and anneal process parameters, as well as electrical and reliability performance.
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申请公布号 |
US7844101(B2) |
申请公布日期 |
2010.11.30 |
申请号 |
US20060343792 |
申请日期 |
2006.01.31 |
申请人 |
APPLIED MATERIALS ISRAEL, LTD. |
发明人 |
SVIDENKO VICKY;LEVIN LIOR |
分类号 |
G06K9/00;G06K9/40 |
主分类号 |
G06K9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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