SEMICONDUCTOR DEVICE HAVING DEEP CONTACT STRUCTURE AND METHOD OF MANUFATURING THE SAME

摘要

PURPOSE: A semiconductor device with a deep contact structure and a manufacturing method thereof are provided to form a contact plug with a positive slope on an upper sidewall by removing an anisotropic preliminary hole on the upper side. CONSTITUTION: A first interlayer insulation layer(121) is formed on a semiconductor substrate. A contact plug(140) is formed inside the first interlayer insulation layer. The contact plug has a bowing shaped upper sidewall. A contact pad(160) is formed on the upper side of the contact plug.