发明名称 DELAY CIRCUIT
摘要 A delay circuit (100) includes capacitor elements constituted of nMOS transistors (141, 142) between an input inverter circuit (110) and an output inverter circuit (120). The input inverter circuit (110) includes a pMOS transistor (PM1) and an nMOS transistor (NM1) that are directly connected between a power source potential (VDD) and a ground potential (VSS) through a resistor (R1). Between a signal line (130) and the gate of the nMOS transistor (141), and between the signal line (130) and the gate of the nMOS transistor (142), pMOS transistors (151, 152) are provided, respectively. In this structure, in the case where an input signal is changed from L to H, the PVT sensitivity of a delay circuit is automatically alleviated. As a result, the PVT sensitivity is automatically alleviated.
申请公布号 US2010295593(A1) 申请公布日期 2010.11.25
申请号 US20100772667 申请日期 2010.05.03
申请人 NEC ELECTRONICS CORPORATION 发明人 YOSHIDA MASAHIRO
分类号 H03H11/26 主分类号 H03H11/26
代理机构 代理人
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